Optomechanical systems based on nanophotonics are advancing the field ofprecision motion measurement, quantum control and nanomechanical sensing. Inthis context III-V semiconductors offer original assets like theheteroepitaxial growth of optimized metamaterials for photon/phononinteractions. GaAs has already demonstrated high performances in optomechanicsbut suffers from two photon absorption (TPA) at the telecom wavelength, whichcan limit the cooperativity. Here, we investigate TPA-free III-V semiconductormaterials for optomechanics applications: GaAs lattice-matched In0:5Ga0:5P andAl0:4Ga0:6As. We report on the fabrication and optical characterization of highfrequency (500-700 MHz) optomechanical disks made out of these two materials,demonstrating high optical and mechanical Q in ambient conditions. Finally weachieve operating these new devices as laser-sustained optomechanicalself-oscillators, and draw a first comparative study with existing GaAssystems.
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